Insulating film for semiconductor device and semiconductor...

Details Insulating film for semiconductor device and semiconductor... Insulating film for semiconductor device and semiconductor...

1999-01-12

2001-09-18

Jones, Deborah (Department: 1775)

Stock material or miscellaneous articles

Composite

Of fluorinated addition polymer from unsaturated monomers

C428S141000, C428S451000, C428S461000, C428S500000, C257S632000, C257S642000, C427S255140

Reexamination Certificate

active

06291072

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to an interlayer insulating film formed on a production process of a semiconductor device, and a semiconductor device using the interlayer insulating film.
BACKGROUND OF THE INVENTION
Miniaturization of circuit patterns, low power consumption and high-speed operation of semiconductor devices proceed, and therefore low capacitance and low resistance of the circuit patterns are spread. As one means of ensuring high-speed and normal operation of the circuit, there has been considered to lower a dielectric constant of an interlayer insulating film.
An insulating film containing a carbon atom, such as an amorphous carbon film, an organic compound insulating film containing a fluorine atom, and an inorganic insulating film have drawn attention as an insulating film having a low dielectric constant. However, must satisfy the following requirements to become a substitute of a silicon oxide insulating film, which is most frequently employed at the present. That is, they must have:
1) Low dielectric constant, and also the following characteristics, which are basically required for a semiconductor insulating film:
2) Good adhesion,
3) Good workability,
4) Good in step coverage
5) Good in gap fill property,
6) Low water absorption
7) Capability of coping with a damascene process (embedded wiring).
However, no material has been known that has a low dielectric constant and satisfies all the characteristics required for an interlayer insulating film of a semiconductor device.
SUMMARY OF THE INVENTION
An object of the invention is to provide an insulating film having a low dielectric constant and exhibiting performance that is sufficient as an interlayer insulating film of a semiconductor device, and also provide a semiconductor device using the insulating film.
The object of the invention can be accomplished by the following constitutions of the invention.
(1) An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly-&agr;,&agr;-difluoroparaxylylene and having a relative dielectric constant of from 2.1 to 2.7.
(2) An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly-&agr;,&agr;-difluoroparaxylylene and exhibiting a step coverage of from 0.4 to 0.9.
(3) An insulating film for a semiconductor device capable of being filled in a gap, the insulating film consisting essentially of poly-&agr;,&agr;-difluoroparaxylylene, having a ratio (D/L) of a depth (D) and an opening width (L) of 1 or more.
(4) An insulating film for a semiconductor device as in one of the constitutions (1) to (3), wherein a shape of the insulating film is capable of being patterned by irradiation of oxygen plasma.
(5) A semiconductor device comprising a semiconductor substrate having thereon at least two conductive layers through an interlayer insulating film, the interlayer insulating film is an insulating film as in one of the constitutions (1) to (4).


REFERENCES:
patent: 3332891 (1967-07-01), Chow et al.
patent: 3945823 (1976-03-01), Parent et al.
patent: 3947371 (1976-03-01), Parent et al.
patent: 4225647 (1980-09-01), Parent et al.
patent: 4783561 (1988-11-01), Pregaglia et al.
patent: 4925712 (1990-05-01), Cicuta et al.
patent: 5024879 (1991-06-01), Massa et al.
patent: 5096849 (1992-03-01), Beilstein, Jr. et al.
patent: 5310858 (1994-05-01), Greiner et al.
patent: 406112336A (1994-04-01), None
patent: WO 97/15541 (1997-05-01), None
Takahito Itoh, et al., Journal of Polymer Science: Part A: Polymer Chemistry, vol. 33, pp. 359-363, “Synthesis of 1,1,9,9-Tetrafluoro[2.2]paracyclophane and Its Polymerization by Vapor Deposition Method”, 1995 (no month).
Alphametals, 2 pages, “Parylene VIP™ AF-4”, 1996 (no month).

Affiliated with

Also associated with

Rating

Insulating film for semiconductor device and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulating film for semiconductor device and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating film for semiconductor device and semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2436534