Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1991-05-15
1993-07-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257514, 257374, 257520, H01L 2818, H01L 2350
Patent
active
052257070
ABSTRACT:
A semiconductor device includes a semiconductor substrate, first and second semiconductor layers of opposite conductivity types successively disposed on the semiconductor substrate, and a via hole structure including a hole penetrating through the first and second semiconductor layers and into the substrate, the via holes being defined by a side wall of the first and second layers and of the substrate, an electrically conducting material disposed on the side wall contacting the first and second semiconductor layers, and an electrically isolating region disposed in the first and second layers at the side wall and contacting the electrically conducting material. The electrically isolating region is formed with an ion flux applied either before or after etching of the via hole.
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Sumitani et al., "A High Aspect Ratio Via Hole Dry Etching Technology For High Power GaAs MESFET", IEEE GaAs IC Symposium, Oct. 1989, pp. 207-210.
Kobiki et al., "A Ka-Band GaAs Power MMIC", IEEE Monolithic Circuits Symposium, 1985, pp. 31-34.
Kobiki Michihiro
Komaru Makio
Clark S. V.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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