Insulated substrate for flip-chip integrated circuit device

Details Insulated substrate for flip-chip integrated circuit device Insulated substrate for flip-chip integrated circuit device

1988-09-16

1990-12-18

Sikes, William L.

357 71, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

049790153

ABSTRACT:
A substrate for mounting a flip-chip on a metallized circuit on the upper surface of the substrate. The substrate is silicon carbide condensed on a graphite or silicon core. The upper surface of the silicon carbide has a layer of insulating material comprised of silicon oxide, silicon nitride, aluminum nitride, boron nitride, an organic insulator such as polyimide, and diamond. The insulator prevents inadvertent shorting of the integrated circuit. The insulating layer can be deposited on the silicon carbide by such processes as chemical vapor deposition, sputtering, spinning or roller coating.

REFERENCES:
patent: 4480013 (1984-10-01), Doi et al.
patent: 4546406 (1985-10-01), Spinelli et al.
patent: 4698663 (1987-10-01), Sugimoto et al.
patent: 4742024 (1988-05-01), Sugimoto et al.
Koharu, M. et al., "Thermal-Stress-Free Package for Flip Chip Devices", IEEE Transactions, CHMT-7, 34th ECC, May, 1984, pp. 388-393.

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