Insulated gate type transistors

Details Insulated gate type transistors Insulated gate type transistors

1981-09-21

1984-07-03

Edlow, Martin H.

357 2312, 357 231, 357 35, H01L 2978

Patent

active

044582617

ABSTRACT:
An insulated gate type transistor has a nonsaturating current characteristic as well as a saturating current type characteristic. P.sup.+, N, N.sup.+ or N.sup.+, P, P.sup.+ regions are juxtaposed in the horizontal direction in a semiconductor layer formed on an insulating layer. A gate electrode is provided on a portion of the N or P region through a gate insulating film, and the thickness of the N or P region beneath the gate electrode is less than .pi./2 times of a Debye length inherent to the semiconductor constituting the active region.

REFERENCES:
patent: 3339086 (1967-08-01), Shoikly
patent: 4050965 (1977-09-01), Ipri
patent: 4233616 (1980-11-01), Kyomasu
patent: 4247863 (1981-01-01), Togei
Nishizawa, I.E.E.E. Trans. Electronic Devices, vol. ED-22, No. 4, April, 1975, pp. 185-197.

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