Insulated gate type semiconductor device with potential detectio

Details Insulated gate type semiconductor device with potential detectio Insulated gate type semiconductor device with potential detectio

1998-07-16

2000-05-30

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257355, H01L 2974

Patent

active

06069372&

ABSTRACT:
Internal gate electrodes (71) are all connected in common to a gate terminal, and a floating gate electrode (72) is connected to the gate electrode of an NMOS transistor (M1). An external emitter electrode (91) is provided on a first major surface of P-type diffused lease region (21), and N-type diffused emitter region (31) and P-type diffused base region (21) are short-circuited. The source of the NMOS transistor (M1) and an emitter terminal are also connected to the external emitter electrode (91). The drain of the NMOS transistor (M1) is connected to an external terminal.

REFERENCES:
patent: 4783690 (1988-11-01), Walden et al.
patent: 5162966 (1992-11-01), Fujihira
patent: 5360984 (1994-11-01), Kirihata
patent: 5714775 (1998-02-01), Inoue et al.
patent: 5798538 (1998-08-01), Nadd et al.
Tomoyuki Yamazaki, et al., "Avalanche Secured IGBT," 1992 National Convention Record I.E.E. Japan, vol. 5, pp. 5-16.

Affiliated with

Also associated with

Rating

Insulated gate type semiconductor device with potential detectio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate type semiconductor device with potential detectio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate type semiconductor device with potential detectio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1912139