Insulated gate type semiconductor device having a diffusion...

Details Insulated gate type semiconductor device having a diffusion... Insulated gate type semiconductor device having a diffusion...

2005-03-22

2005-03-22

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S133000, C257S137000, C257S328000, C257S329000, C257S330000

Reexamination Certificate

active

06870200

ABSTRACT:
A surface region of a first base layer is formed with a second base layer. Trenches are formed over a range from the surface of the second base layer to the first base layer. The second base layer is divided into base layers. Each of first trenches is formed with a trench gate electrode. An emitter layer is formed in a surface region of the base layer intermittently selected from base layers positioned between first trenches, and contacts with the trench. Dummy trenches are formed over a range from the surface of the base region where the emitter layer is not formed to the first base layer at a position near to each of trenches. A diffusion region is formed in the first base layer to contact with the side portion of dummy trenches formed at the bottom of each trench and a position near thereto.

REFERENCES:
patent: 5448083 (1995-09-01), Kitagawa et al.
patent: 5719409 (1998-02-01), Singh et al.
patent: 20020070418 (2002-06-01), Kinzer et al.
patent: 2314206 (1997-12-01), None
patent: 10-163483 (1998-06-01), None
patent: 2002-164542 (2002-06-01), None

Affiliated with

Also associated with

Rating

Insulated gate type semiconductor device having a diffusion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate type semiconductor device having a diffusion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate type semiconductor device having a diffusion... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3381263