Insulated gate type semiconductor apparatus with a control circu

Details Insulated gate type semiconductor apparatus with a control circu Insulated gate type semiconductor apparatus with a control circu

1997-12-29

2000-05-02

Jackson, Stephen W

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific quantity comparison means

361 911, 361 931, 361103, 361115, H02H 300

Patent

active

060579986

ABSTRACT:
There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device.
In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on.
By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.

REFERENCES:
patent: 5200879 (1993-04-01), Sasagawa et al.
patent: 5383082 (1995-01-01), Nishizawa

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