Insulated gate type field effect transistors

Details Insulated gate type field effect transistors Insulated gate type field effect transistors

1976-02-13

1978-02-14

Miller, Jr., Stanley D.

357 55, H01L 2978

Patent

active

040743004

ABSTRACT:
In an insulated gate type field effect transistor comprising spaced source and drain regions, an insulating film between the source and drain regions and a gate electrode mounted on the insulating film, an inverted frustum shaped polycrystalline semiconductor layer is formed on the insulating film and the gate electrode is mounted on the polycrystalline semiconductor layer.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 3738880 (1973-06-01), Laker
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3780359 (1973-12-01), Dumke et al.
patent: 3906541 (1975-09-01), Goronkin
patent: 3942241 (1976-03-01), Harigaya et al.
patent: 3943542 (1976-03-01), Ho et al.

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