Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-03-01
1996-09-24
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257341, 361 56, H01L 2974, H01L 2976
Patent
active
055593470
ABSTRACT:
An insulated gate-type bipolar transistor with an overcurrent limiting function that is capable of keeping the ratio of a main current to a detection current constant even under different operating conditions, and capable of suppressing the voltage dependence of the limited-current value to perform stable overcurrent protection. P-wells are formed so that they are incorporated between main cell IGBTs as sensing cells for current detection on part of the semiconductor substrate on which a large number of main cells are formed integratedly, and current-detecting emitter electrodes connected to the P-wells are connected to an overcurrent-protection circuit and separated from the main emitter electrodes connected to the main IGBT cells. Given such a configuration, the overcurrent flowing into the main cells during a load short circuit in an inverter device is detected as a hole current from the P-wells with a high accuracy of keeping the current ratio to the current in the main cells constant, and moreover, stable overcurrent protection is performed keeping the limited current values suppressed below the short-circuit withstand capability without dependence on the power supply voltage.
REFERENCES:
patent: 4642674 (1987-02-01), Schoofs
patent: 5303110 (1994-04-01), Kumagai
patent: 5341003 (1994-08-01), Obinata
Otsuki Masahito
Yamazaki Tomoyuki
Fuji Electronic Co., Ltd.
Prenty Mark V.
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