Insulated gate type bipolar-transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257139, H01L 2974, H01L 31111

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active

059733381

ABSTRACT:
An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.

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Muller et al, Device Electronics for IC's, p. 204, 1986.
S.M. Sze, "Physics of Semiconductor Devices", 2nd Edition, 1981, pp. 194-195.
B. Jayant Bagliga, "Analysis of the Output Conductance of Insulated Gate Transistors", IEEE Electron Device Letters, vol. EDL-7, No. 12, Dec. 1986, pp. 686-688.
Muller et al. "Device Electronics for IC's", p. 204, 1986.

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