Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-10-08
1999-10-26
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, H01L 2974, H01L 31111
Patent
active
059733381
ABSTRACT:
An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.
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Kato Naohito
Okabe Naoto
Tokura Norihito
Meier Stephen D.
Nippondenso Co., Ltd
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