Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-05-15
2007-05-15
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S192000
Reexamination Certificate
active
10682154
ABSTRACT:
The present invention-provides a tunnel-injection device which encompasses, a reception layer made of a first semiconductor, a barrier-forming layer made of a second semiconductor having a bandgap-narrower than the first semiconductor, being in metallurgical contact with the reception layer, a gate insulating film disposed on the barrier-forming layer. The gate electrode controls the width of the barrier generated at the heterojunction interface between the reception layer and the barrier-forming layer so as to change the tunneling probability of carriers through the barrier. The device further encompasses a carrier receiving region being contact with the reception layer and a carrier-supplying region being contact with the barrier-forming layer.
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Hayashi Tetsuya
Hoshi Masakatsu
Kaneko Saichirou
Mihara Teruyoshi
Tanaka Hideaki
Dickey Thomas L.
McDermott Will & Emery LLP
Nissan Motor Co,. Ltd.
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