Insulated gate transistor with vertical integral diode and metho

Details Insulated gate transistor with vertical integral diode and metho Insulated gate transistor with vertical integral diode and metho

1988-09-09

1990-06-12

Clawson, Jr., Joseph E.

357 20, 357 234, 357 238, 357 43, 357 86, H01L 2974

Patent

active

049337408

ABSTRACT:
An improved lateral insulated gate transistor includes a dual function anode and employs specially configured anode and cathode regions within the drift layer to promote lateral current flow. A vertical diode is disposed between a substrate cathode and anode of the device. Under forward bias conditions, the device exhibits insulated gate controlled conduction, and under reverse bias conditions, the device exhibits conduction between the substrate cathode and anode of the vertical diode.

REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4422089 (1983-12-01), Vaes et al.
Article "Analysis of the Lateral Insulated Gate Transistor" by M. R. Simpson, P. A. Gough, F. I. Hshieh and V. Rumennik published in the Technical Digest of the International Electron Device Meeting, 1985, pp. 740-743.

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