Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-01-12
1996-10-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257356, 257363, 257368, 257392, 361 91, H01L 310312
Patent
active
055656927
ABSTRACT:
For protecting the gate insulating layer of an insulated gate field-effect transistor from electrostatic charges, the main terminals of a depletion mode (normally conducting) field-effect transistor, serving as a protection transistor, are connected between the gate and source terminals of the transistor to be protected, thus providing a shunt path for electrostatic charges when the protection transistor is not biased out of conduction. For normal operation, the protection transistor is biased out of conduction by applying to its gate terminal the voltage drop across a biasing resistor in series with the source terminal of the insulated gate field-effect transistor. This protection arrangement is particularly advantageous for silicon carbide field-effect transistors which are not readily suited to application of conventional (i.e. silicon transistor) gate insulating layer protection techniques.
REFERENCES:
patent: 4449158 (1984-05-01), Taira
patent: 5111262 (1992-05-01), Chen et al.
patent: 5385855 (1995-01-01), Brown et al.
General Electric Company
Prenty Mark V.
Snyder Marvin
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