Insulated gate transistor drive circuit

Details Insulated gate transistor drive circuit Insulated gate transistor drive circuit

1996-08-14

1998-09-15

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327427, 327380, H03K 1708, H03K 1728

Patent

active

058085041

ABSTRACT:
The cutoff process of a collector current of an insulated gate transistor is divided into an emitter-to-collector voltage recovery period and a collector current cutoff period. During the emitter-to-collector voltage recovery period the resistance of a gate resistor of the transistor is reduced, and during the collector current cutoff period the resistance of the gate resistor is increased. With this arrangement, the cutoff time is shortened, thereby reducing switching loss and suppressing surge voltage.

REFERENCES:
patent: 4719531 (1988-01-01), Okado et al.
patent: 4928053 (1990-05-01), Sicard et al.
patent: 5055721 (1991-10-01), Majumdar et al.
patent: 5061863 (1991-10-01), Mori et al.
patent: 5173848 (1992-12-01), Roof
patent: 5287023 (1994-02-01), Miyasaka
patent: 5396117 (1995-03-01), Housen et al.
patent: 5500619 (1996-03-01), Miyasaka

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