Insulated gate transistor devices with temperature and current s

Details Insulated gate transistor devices with temperature and current s Insulated gate transistor devices with temperature and current s

1990-09-20

1991-11-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 28, 307362, G05F 326, H01L 2978

Patent

active

050633074

ABSTRACT:
A technique for sensing the temperature of power MOS devices contemplates a main transistor and monolithically formed sense transistor. A resistor, which may integrated into the device or may be off chip, is connected between the respective source nodes of the main transistor and the sense transistor (as in a normal current mirror). However, the respective gate nodes of the main transistor and the sense transistor are not directly connected to each other (in contrast to the normal current mirror configuration where the respective gate nodes of the main transistor and the sense transistor are directly connected). Rather, the sense transistor gate node is coupled to the output terminal of an operational amplifier. The amplifier, has a first input terminal coupled to a reference voltage and a second, complementary, input terminal coupled to the sense transistor source node.

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patent: 4931844 (1990-06-01), Zommer
M. Glogolja, "Built-In Protection Makes TEMPFET Resistant To Catastrophic Failures", PCIM, Mar. 1989; pp. 19-22.
N. Zommer et al.; "Power Current Mirror Devices and Their Applications"; PCI Jun. 1986 Processing; pp. 275-283.
Harris Data Sheet; Current Sensing IGT Transistors Insulated Gate Bipolar Transistors.

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