Insulated gate thyristor with gate turn on and turn off

Details Insulated gate thyristor with gate turn on and turn off Insulated gate thyristor with gate turn on and turn off

1992-10-14

1995-01-10

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257152, H01L 2974, H01L 2972, H01L 2900

Patent

active

053810252

ABSTRACT:
An insulated gate thyristor (IGTH) (40,80) that is built on IGBT technology rather than SCR or thyristor technology. The device provides the low on-resistance of a thyristor with the gate turn-on and turn-off capability of an IGBT. The device may be fabricated in a somewhat modified IGBT process, in a cellular (40) or stripe (80) configuration. First the process is modified (by reduced doping) in order to promote (rather than inhibit) latch-up. Second, certain regions (52) are formed without source diffusions to create a lateral MOSFET (T.sub.5) that can turn off the latched IGBT.

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M. Stoisiek et al., "Power Devices With MOS-Controlled . . . ", Siemens Forsch-U. Entwickl. -Ber. BD 14 (1985), pp. 45-49.
V. A. K. Temple, "Power Device Evolution and the MOS-Controlled Thyristor", PCIM, Nov. 1987, pp. 23, 25-29.

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