Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1995-03-31
1997-03-25
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257154, 257538, 257537, H01L 2974, H01L 2900
Patent
active
056147384
ABSTRACT:
An emitter switched thyristor (EST) has improved turn-off withstand capability without deteriorating its on-voltage. The EST obtains a potential drop through a resistor disposed between the main electrode and the base region and facilitates uniformly recovering the reverse-blocking ability of the PN junction, in contrast to the ESTs of the prior art which obtain the potential drop by the current in Z-direction for latching up the thyristor from the IGBT mode. The present EST may be formed also in a horizontal device or a trench structure.
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"An Emitter Switched Thyristor with Base Resistance Control" by M.S. Shekar et al., IEEE Electron Device Letters, 14(1993)Jun., No. 6, New York.
The MOS-Gated Emitter Switched Thyristor by B. Jayant Baliga, reprinted from IEEE Electron Device Letters, vol. 11, No. 2, Feb. 1990, pp. 75-77.
High-Voltage Current Saturation in Emitter Switched Thyristors, M. S. Shekar et al., IEEE Electron Device Letters, vol. 12, No. 7, Jul. 1991, pp. 387-389.
MOS Controlled Thyristors (MCT's), V. A. K. Temple, IEDM 84, pp. 282-285 No Date.
Comparison of RBSOA of ESTs with IGBTs and MCTs, N. Iwamuro et al., Proc. of the 6th Internat. Symposium on Power Semiconductor Devices & ICs, Switzerland, May 31-Jun. 2, 1994, Session 5, pp. 195-200.
A Study of EST's Short-Circuit SOA N. Iwamuro et al., 5th International Symposium on Power Semiconductor Devices and IC's, 1993 IEEE, pp. 71-76 No Month.
Abraham Fetsum
Fahmy Wael
Fuji Electric & Co., Ltd.
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