Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1997-03-25
1999-08-10
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257152, 257153, H01L 2974, H01L 31111
Patent
active
059362677
ABSTRACT:
Surfaces of a second p base region 6 and an n emitter region 8 are covered with an insulating film 19 and the second p base region 6 and a first p base region 4 are connected partially below a gate electrode 10. In a conventional EST, a potential difference is obtained by hole current flowing in a Z direction to make the transition from an IGBT mode to a thyristor mode. However, since an n emitter region 8 becomes a potential almost equal to that of an n source region 7, hole current injected from a p emitter layer 1 causes the potential of the second p base region 6 to rise, making the prompt transition to the thyristor mode. Particularly, in the portion where the second p base region 6 and the first p base region 4 are in contact with each other, an inversion layer at the gate on time is short and small in resistance and does not touch an n base layer 3, thus electrons from the n source region 7 flow effectively into the n emitter region 8 and the on-state voltage is lowered. At the turn-off time, a pn junction below the n emitter region 8 is uniformly covered, the destruction resistance amount is enhanced, and the turn-off time is shortened.
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V.A.K. Temple, "MOS Controlled Thyristors (MCT's)," IEDM, pp. 282-285 (1984).
M.S. Shekar et al., "High-Voltage Current Saturation in Emitter Switched Thyristors," IEEE Electron Device Letters, vol. 12, No. 7, pp. 387-389 (1991).
N. Iwamuro et al., "A Study of EST's Short-Circuit SOA," IEEE, pp. 71-76 (1993).
N. Iwamuro et al., "Comparison of RBSOA of ESTs With IGBTs and MCTs," IEEE, pp. 195-200 (1994).
Fahmy Wael
Fuji Electric & Co., Ltd.
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