Insulated Gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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Details

257107, 257133, 257147, 257151, 257152, 257153, H01L 2974, H01L 31111

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active

056591853

ABSTRACT:
Improved breakdown withstand capability is realized in a double gate insulated gate thyristor with low on-voltage in the thyristor operation mode and high-speed turn-off in the IGBT operation mode. Turn-off current through the lateral MOSFET using a second gate electrode is reduced, and breakdown withstand capability of the insulated gate thyristor is improved by inclusion of a gap in the (n) type source region, by contacting a part of the cathode directly to the (p) type base layer, and by connecting the bipolar transistor and the thyristor in parallel, for a part of the turn-off current to flow through the bipolar transistor to the cathode. A trench-type first gate electrode is preferred.

REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4851889 (1989-07-01), Matsuzaki
Chang et al., "IGBT with a trench gate structure", IEDN, IEEE, pp. 674-677, 1987.
Baliga, "Trench-Gate Base--Resistancee--Controlled Thyristors", IEEE Electron Device Letters, vol. 13, No. 12, Dec. 1992.
"IGBT Mode Turn-Off Thyristor (IGTT) Fabricated on SOL Substrate" Ogura et al. 1992 IEEE, pp. 241-244.
"Double Gate MOS Device Having IGBT and MCT Performances" by Momota et al.; Proceedings of 1992 International Symposium on Power Semiconductor Devices & IC's, Tokyo, pp. 28-33.
"Dual Gate MOS Thyristor (DGMOT)" by Seki et al.; 1993 IEEE pp. 159-164.
"Switching Behavior and Current Handling Performance of MCT-IGBT Cell Ensembles" by Lendenmann et al.; 1991 IEEE pp. 149-152.

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