Insulated gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257144, 257151, 257153, H01L 2974, H01L 2978

Patent

active

056378882

ABSTRACT:
The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an n.sup.- base layer with high resistivity, on the first surface of which is selectively formed a p type base region. The first source region, the second source region, and an n.sup.+ emitter region are selectively formed in the surface layer of the p type base region. The first gate electrode is formed above the exposed area of the n.sup.- base layer, and the portion of the p type base region extending between the n.sup.- base layer and the first source region. The second gate electrode is formed above the second source region, and the portion of the p type base region extending between the second source region and the emitter region. The length of the poly-silicon constituting the gate electrodes is set at 4 mm or less or the sheet resistance of the poly-silicon is set at 70 .OMEGA./.quadrature. or less.

REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa
patent: 5091766 (1992-02-01), Terashima
patent: 5281833 (1994-01-01), Ueno
Ueno et al., "The Dual Gate Power Device Exhibiting the IGBT and the Thyristor Action", IEEE Electron Dev. Let. vol. 16, No. 7 Jul. 1995 pp. 328-329.
Temple, V.A.K., IEDM 84, pp. 282-285 (1984) "MOS controlled thyristors (MCT's)".
Momota, S., Proc. 1992 International Symp. on Power semiconductor Devices & IC's, Tokyo, pp. 28-33, "Double Gate MOS device having IGBT and MCT performances".
Seki, Y., Proc. 5th International Symp. on Power semiconductor Devices & IC's, pp. 159-164 (1993), "Dual Gate MOS Thyristor (DGMOT)".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Insulated gate thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate thyristor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-766974

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.