Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-08-30
1997-06-10
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257144, 257151, 257153, H01L 2974, H01L 2978
Patent
active
056378882
ABSTRACT:
The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an n.sup.- base layer with high resistivity, on the first surface of which is selectively formed a p type base region. The first source region, the second source region, and an n.sup.+ emitter region are selectively formed in the surface layer of the p type base region. The first gate electrode is formed above the exposed area of the n.sup.- base layer, and the portion of the p type base region extending between the n.sup.- base layer and the first source region. The second gate electrode is formed above the second source region, and the portion of the p type base region extending between the second source region and the emitter region. The length of the poly-silicon constituting the gate electrodes is set at 4 mm or less or the sheet resistance of the poly-silicon is set at 70 .OMEGA./.quadrature. or less.
REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa
patent: 5091766 (1992-02-01), Terashima
patent: 5281833 (1994-01-01), Ueno
Ueno et al., "The Dual Gate Power Device Exhibiting the IGBT and the Thyristor Action", IEEE Electron Dev. Let. vol. 16, No. 7 Jul. 1995 pp. 328-329.
Temple, V.A.K., IEDM 84, pp. 282-285 (1984) "MOS controlled thyristors (MCT's)".
Momota, S., Proc. 1992 International Symp. on Power semiconductor Devices & IC's, Tokyo, pp. 28-33, "Double Gate MOS device having IGBT and MCT performances".
Seki, Y., Proc. 5th International Symp. on Power semiconductor Devices & IC's, pp. 159-164 (1993), "Dual Gate MOS Thyristor (DGMOT)".
Fuji Electric & Co., Ltd.
Monin, Jr. Donald L.
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