Insulated gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

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257152, 257163, H01L 2974, H01L 31111

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active

059397365

ABSTRACT:
A semiconductor device for conducting a in current across a cathode electrode and an anode electrode, includes a thyristor formed of an n.sup.+ floating region connected electrically to the cathode electrode, a p.sup.+ anode connected electrically to the anode electrode, a p base, and an n.sup.- layer. A p.sup.+ diverter is provided inside and outside the p base region. The semiconductor device further includes a gate oxide film and a gate electrode for forming a channel region between the p base and each p.sup.+ diverter and between the n.sup.+ floating region and the n.sup.- layer. When the thyristor is turned off, the hole-current within the p base is split into each p.sup.+ diverter. A semiconductor device superior in controllable current is obtained.

REFERENCES:
patent: 5281833 (1994-01-01), Ueno
patent: 5381025 (1995-01-01), Zommer
patent: 5457329 (1995-10-01), Harada
Anup Bhalla et al., "ESTD: An Emitter Switched Thyristor with a Diverter," IEEE Electron Device Letters, vol. 16, No. 2, Feb. 1995, pp. 77-79 (previously cited in IDS dated Jan. 8, 1997).
Bhalla, Anup, et al: "ESTD: An Emitter Switched Thyristor with a Diverter", IEEE Electron Device Letters, vol. 16, No. 2, Feb. 1995, pp. 77-79.
Nandakumar, M., et al: "A New MOS-Gated Power Thyristor Structure with Turn-Off Achieved by Controlling the Base Resistance", IEEE Electron Device Letters, vol. 12, No. 5, May 1991, pp. 227-229.

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