Insulated gate thyristor

Details Insulated gate thyristor Insulated gate thyristor

1997-05-06

2000-07-18

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257137, 257134, 257147, H01L 2974, H01L 2900

Patent

active

060910879

ABSTRACT:
An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, and a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region. The thyristor further includes a gate electrode formed through an insulating film on the first second-conductivity-type base region, an exposed portion of the first-conductivity-type base layer and the second second-conductivity-type base region, a first main electrode that contacts both the first second-conductivity-type base layer and first-conductivity-type source region, a second-conductivity-type emitter layer formed on the first-conductivity-type base layer, a second main electrode that contacts the second-conductivity-type emitter layer, and an insulating film covering entire areas of surfaces of the second second-conductivity-type base region and first-conductivity-type emitter region. The second second-conductivity-type base region has a diffusion depth that is greater than a larger one of diffusion depths of the first second-conductivity-type base region and a second-conductivity-type well region included in the first second-conductivity-type base region.

REFERENCES:
patent: 4698655 (1987-10-01), Schultz
patent: 4847671 (1989-07-01), Pattanayak et al.
patent: 5151762 (1992-09-01), Uenishi et al.
patent: 5614738 (1997-03-01), Iwamuro
patent: 5766966 (1998-06-01), Ng

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