Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1996-04-02
1997-11-04
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257152, 257155, H01L 2974, H01L 31111
Patent
active
056843062
ABSTRACT:
An insulated gate thyristor is provided which includes a first-conductivity-type base layer having a high resistivity, a first and a second second-conductivity-type base region separately formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, and a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region. A gate electrode is formed through an insulating film on exposed portions of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, which exposed portions are interposed between the first-conductivity-type source region and the first-conductivity-type emitter region. A first main electrode is held in contact with both the first second-conductivity-type base region and the first-conductivity-type source region. A first-conductivity-type semiconductor film is interposed between and held in contact with the first main electrode and an exposed portion of the second second-conductivity-type base region, to cooperate with the second second-conductivity-type base region to form a diode. A second-conductivity-type emitter layer is formed on the other surface of the first-conductivity-type base layer, and a second main electrode is held in contact with the second-conductivity-type emitter layer.
Fahmy Wael
Fuji Electric & Co., Ltd.
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