Insulated gate thyristor

Details Insulated gate thyristor Insulated gate thyristor

1997-02-13

1999-06-22

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257134, 257138, 257330, 257135, H10L 2974, H10L 31111

Patent

active

059145030

ABSTRACT:
An insulated gate thyristor is provided in which an inversion layer is created beneath a gate electrode to which a voltage is applied. An emitter region of a first conductivity type is biased to the same potential as a first main electrode via a MOSFET channel, and a thyristor portion consisting of the emitter region, a second base region of a second conductivity type, a base layer of the first conductivity type and an emitter layer of the second conductivity type is turned on. As electrons are injected uniformly from the entire emitter region, the insulated gate thyristor quickly shifts to the thyristor mode, and the on-voltage of the insulated gate thyristor of the invention is lowered. The insulated gate thyristor of the invention does not require a hole current that flows through the second base region of a convention EST in the Z-direction. In turning off, the pn junction recovers quickly without causing current localization, and the breakdown withstand capability if improved.

REFERENCES:
patent: 4502070 (1985-02-01), Leipold et al.
patent: 5378914 (1995-01-01), Ohzu et al.
patent: 5554862 (1996-09-01), Omura et al.
patent: 5719411 (1998-02-01), Ajit

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