Insulated gate thyristor

Details Insulated gate thyristor Insulated gate thyristor

1997-10-16

1999-11-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, 257147, 257152, 257156, H01L 29745, H01L 29739

Patent

active

059819847

ABSTRACT:
An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, and a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region. The thyristor further includes a gate electrode layer formed on an insulating film over the first second-conductivity-type base region, an exposed portion of the first-conductivity-type base layer and the second second-conductivity-type base region, a first main electrode that contacts both the first second-conductivity-type base layer and first-conductivity-type source region, a second-conductivity-type emitter layer formed on the first-conductivity-type base layer, a second main electrode that contacts the second-conductivity-type emitter layer, a gate electrode that contacts the gate electrode layer, and an insulating film covering entire areas of surfaces of the second second-conductivity-type base region and first-conductivity-type emitter region. In this insulated gate thyristor, the first-conductivity-type base layer includes a locally narrowed portion which is interposed between the first and second second-conductivity-type base regions.

REFERENCES:
patent: 4847671 (1989-07-01), Pattanayak et al.
patent: 4857983 (1989-08-01), Baliga et al.
patent: 4888627 (1989-12-01), Pattanayak et al.
patent: 4912541 (1990-03-01), Baliga et al.
patent: 5317171 (1994-05-01), Shekar et al.
patent: 5319222 (1994-06-01), Shekar
patent: 5621226 (1997-04-01), Kobayashi
patent: 5684306 (1997-11-01), Iwamuro
patent: 5729032 (1998-03-01), Tomomatsu
M.S. Shekar et al., High Voltage Current Saturation in Emitter No. 7, Jul. 1991.
N. Iwamuro et al., "A Study of EST's Short Circuit SOA", 5th Int. Symposium on Power Semiconductor Devices & IC's, IEEE 1993, pp. 71-76.
N. Iwamuro et al., Comparison of RBSOA of EST's with IGBTs Semiconductor Devices & IC's, IEEE 1994, pp. 195-199.
B. Jayant Baliga, "The MOS-Gated Emitter Swtiched Thyristor", IEEE Electron Device Letters, vol. 11, No. 2, Feb. 1990.
V.A.K. Temple, "MOS Controlled Thyristors (MCT's)" IEDM, 1984.

Affiliated with

Also associated with

Rating

Insulated gate thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1460041