Insulated gate thyristor

Details Insulated gate thyristor Insulated gate thyristor

1996-04-02

1999-02-23

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257152, 257153, 257172, 257139, H01L 2987, H01L 29745

Patent

active

058747516

ABSTRACT:
An insulated gate thyristor is provided which includes a first-conductivity-type base layer of high resistivity, first and second second-conductivity-type base regions formed in a surface layer of a first major surface of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region, a gate electrode formed on surfaces of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, which surfaces are interposed between the first-conductivity-type source region and the first-conductivity-type emitter region, an insulating film interposed between the gate electrode and these surface of the base regions and layer, a first main electrode in contact with both the first second-conductivity-type base region and the first-conductivity-type source region, a second-conductivity-type emitter layer formed on a second major surface of the first-conductivity-type base layer, and a second main electrode in contact with the second-conductivity-type emitter layer. The entire surface areas of the second second-conductivity-type base region and the first-conductivity-type emitter region are covered with the insulating film.

REFERENCES:
patent: 5014102 (1991-05-01), Adler
patent: 5023696 (1991-06-01), Ogino
patent: 5317171 (1994-05-01), Shekar et al.
patent: 5319222 (1994-06-01), Shekar et al.
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5391898 (1995-02-01), Hagino
Electronics Letters, 31 (1995) 16 Mar. No. 6,Stevenage, Herts Gb, pp. 494-496,XP000530337 S.Sridhar & B.J. Baliga Title.
Dual-channel EST/BRT:A new high-voltage MOS-gated thyristor structure.

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