Insulated-gate thin film transistor with low leakage current

Details Insulated-gate thin film transistor with low leakage current Insulated-gate thin film transistor with low leakage current

1974-06-21

1977-12-27

Larkins, William D.

357 4, 357 15, 357 16, 357 41, 357 49, H01L 2978, H01L 2712

Patent

active

040657817

ABSTRACT:
An insulated-gate thin film transistor is provided with low leakage drain current. A second semiconductor layer makes contact with the source electrode and the semiconductor layer forming the channel of the transistor at least between the source and drain electrodes. The second semiconductor layer is of opposite type conductivity from the channel semiconductor layer and preferably forms a PN heterojunction with the channel semiconductor layer. Alternatively, a metal layer may be used in place of the second semiconductor to form a Schottky-barrier junction with the channel semiconductor layer instead of a PN junction. Preferably, the channel semiconductor layer and the second semiconductor layer or the metal layer are sequentially evaporation deposited through the same deposition mask onto a substrate from evaporant sources spaced substantially different distances from the substrate so that the sequential layers are deposited on first and second overlapping areas of the substrate.

REFERENCES:
patent: 3283221 (1966-11-01), Heiman
patent: 3304469 (1967-02-01), Weimer
patent: 3391354 (1968-07-01), Ohashi et al.
patent: 3493812 (1970-02-01), Weimer
patent: 3541678 (1970-11-01), McDonald
patent: 3590471 (1971-07-01), Lepselter et al.
patent: 3671820 (1972-06-01), Haering et al.
patent: 3739240 (1973-06-01), Krambeck
Sze, Physics of Semiconductor Devices, Wiley-Interscience, N.Y., 1969, pp. 567-586.

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