Insulated gate thin film transistor with amorphous or microcryst

Details Insulated gate thin film transistor with amorphous or microcryst Insulated gate thin film transistor with amorphous or microcryst

1992-10-29

1994-08-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257411, H01L 2701, H01L 2713, H01L 2978

Patent

active

053409990

ABSTRACT:
An insulated gate thin film transistor (TFT) comprises first and second insulating films, and a semiconductor film disposed thereon. The first insulating film is prepared with anodization. The second insulating film is prepared with CVD or sputtering. The semiconductor film is amorphous, or microcrystalline prepared with glow discharge.

REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 3900598 (1975-08-01), Hall et al.
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4065781 (1977-12-01), Gutknecht
patent: 4242156 (1980-12-01), Peel
patent: 4305086 (1981-12-01), Khajezadeh
patent: 4335391 (1982-06-01), Morris
patent: 4425572 (1984-01-01), Takafuji et al.
patent: 4514253 (1985-04-01), Minezaki
"Composite Dielectric Layer" IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, p. 2609.
"Amorphous-silicon thin-film metal-oxide-semiconductor transistors" H. Hayama and M. Matsumura, Appl. Phys. Lett. 36(9) May 1, 1980 pp. 754-755.
Sze, S. M., Physics of Semiconductor Devices, Wiley, 1981, p. 852.

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