Insulated gate static induction thyristor with a split gate type

Details Insulated gate static induction thyristor with a split gate type Insulated gate static induction thyristor with a split gate type

1993-10-29

1995-10-24

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257152, 257153, 257144, H01L 2974, H01L 29743

Patent

active

054612420

ABSTRACT:
In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate region of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed between the first and second gate regions. A MOS structure is formed on the second gate region as a insulated gate control gate region electrode isolated therefrom. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed switching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

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