Insulated gate static induction thyristor with a split gate type

Details Insulated gate static induction thyristor with a split gate type Insulated gate static induction thyristor with a split gate type

1995-03-31

1997-09-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257136, 257152, 257154, 257162, H01L 2974, H01L 31111

Patent

active

056659873

ABSTRACT:
In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed in the second gate. A MOS structure is formed on the second gate as a control gate electrode isolated therefrom. Since the channel integration density is high, the area efficiency increases. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed swtching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

REFERENCES:
patent: 5198687 (1993-03-01), Baliga
Switching Characteristics of an IEE of Japan, Oct. 26, 1990 SI Thyristor With a Shorted Structure.

Affiliated with

Also associated with

Rating

Insulated gate static induction thyristor with a split gate type does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate static induction thyristor with a split gate type, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate static induction thyristor with a split gate type will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-72071