Insulated-gate semiconductor device with improved base-to-source

Details Insulated-gate semiconductor device with improved base-to-source Insulated-gate semiconductor device with improved base-to-source

1987-09-17

1989-02-28

Clawson, Jr., Joseph E.

Optics: motion pictures

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357 20, 357 38, 357 55, 357 67, 357 86, 357 89, H01L 2978

Patent

active

048090476

ABSTRACT:
Insulated-gate semiconductor devices, such as MOSFETs or IGTs, include an implant shorting region adjoining both base and source regions with the implant shorting region being conductively coupled to the source electrode so as to implement a base-to-source electrode short. The implant shorting region can be formed without a specially-aligned mask by utilizing the gate electrode as an implant mask.

REFERENCES:
patent: 3697830 (1972-10-01), Dale
patent: 4364073 (1982-12-01), Becke et al.
patent: 4374455 (1983-02-01), Goodman
patent: 4417385 (1983-11-01), Temple
patent: 4443931 (1984-04-01), Bauga et al.
patent: 4503598 (1985-03-01), Vora et al.
patent: 4516143 (1985-05-01), Cove
patent: 4532534 (1985-06-01), Ford et al.
patent: 4587713 (1986-05-01), Goodman et al.

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