Insulated gate semiconductor device with back-to-back diodes

Details Insulated gate semiconductor device with back-to-back diodes Insulated gate semiconductor device with back-to-back diodes

1987-06-15

1989-05-16

James, Andrew J.

357 2314, 357 234, 357 238, 357 59, 357 52, 357 13, 357 41, H01L 2978

Patent

active

048314242

ABSTRACT:
An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.

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Patent Abstracts of Japan, E-27, Sep. 25, 1980, vol. 4, No. 237, No. 55-91173.
Severns, "MOSFETs Rise to New Levels of Power", Electronics, May 22, 1980, pp. 143-152.

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