Insulated gate semiconductor device with a buried gapped semicon

Details Insulated gate semiconductor device with a buried gapped semicon Insulated gate semiconductor device with a buried gapped semicon

1995-05-16

1996-10-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257153, 257163, 257331, 257332, 257336, 257341, H01L 2974, H01L 31111, H01L 2976, H01L 2994

Patent

active

055699413

ABSTRACT:
A heavily doped n-type semiconductor region is selectively formed at a surface where a p-type semiconductor layer and an n-type semiconductor layer abut each other. Injection of holes from the p-type semiconductor layer to the n-type semiconductor layer is attained by holes which selectively flow in a region where the heavily doped n-type semiconductor region is not present. The high concentration of the holes at such a region exerts a predominant influence in the device when a collector current is small, whereby flow of the collector current is facilitated and the ON-resistance of the device is suppressed. On the other hand, when the collector current is large, under a dominantly strong influence of a fact that flow of the collector current is allowed only through the region where the heavily doped n-type semiconductor region is not provided, the flow of the collector current is suppressed, and hence, the durability against destruction of the device is enhanced. A low ON-resistance and an improved durability against destruction are achieved at the same time.

REFERENCES:
patent: 4985741 (1991-01-01), Bauer et al.
patent: 5093701 (1992-03-01), Nakagawa et al.
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5202750 (1993-04-01), Gough
Patent Abstracts of Japan, vol. 14, No. 139, Mar. 15, 1990, JP-A-2003288, Jan. 8, 1990.
Patent Abstracts of Japan, vol. 11, No. 55 (E-481) [2502], Feb. 20, 1987, and JP-A-61-216363, Sep. 26, 1986.

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