Insulated gate semiconductor device using compound semiconductor

Details Insulated gate semiconductor device using compound semiconductor Insulated gate semiconductor device using compound semiconductor

1988-04-11

1991-07-30

Prenty, Mark

Fishing, trapping, and vermin destroying

357 2315, 357 16, 437132, H01L 2920, H01L 2978, H01L 29161, H01L 2120

Patent

active

050363743

ABSTRACT:
An insulated gate semiconductor device comprises a channel region of compound semiconductor of one conductivity type, source and drain regions of the other conductivity type spaced apart by the channel region, a gate insulation film provided on the channel region, a gate electrode provided on the insulating film and a silicon monocrystal thin film having a thickness of 100 atoms or less inserted between the channel region and the gate insulation film.

REFERENCES:
patent: 4556895 (1985-12-01), Ohata
patent: 4740822 (1988-04-01), Itoh
IEDM Digest, Dec. 1987, #25.8, pp. 560-563 by Yamamoto et al.

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