Insulated-gate semiconductor device having high breakdown voltag

Details Insulated-gate semiconductor device having high breakdown voltag Insulated-gate semiconductor device having high breakdown voltag

1995-06-07

1996-12-17

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257137, 257138, 257135, 257141, H01L 2974, H01L 31111

Patent

active

055856519

ABSTRACT:
An insulated-gate semiconductor device comprises a p type emitter layer, an N.sup.- high-resistive base layer formed on the P type emitter layer, and a P type base layer contacting the N.sup.- high-resistive base layer. A plurality of trenches are formed having a depth to reach into the N.sup.- high-resistive base layer from the P type base layer. A gate electrode covered with a gate insulation film is buried in each trench. An N type source layer to be connected to a cathode electrode is formed in the surface of the P type base layer in a channel region between some trenches, thereby forming an N channel MOS transistor for turn-on operation. A P channel MOS transistor connected to the P base layer is formed in a channel region between other trenches so as to discharge the holes outside the device upon turn-off operation.

REFERENCES:
patent: 4942445 (1990-07-01), Baliga et al.
patent: 5202750 (1993-04-01), Gough

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