Insulated-gate semiconductor device having a contact region in e

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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Details

257220, 257262, 257263, 257283, 257329, 257330, 257332, 257368, 257370, H01L 29788

Patent

active

060607319

ABSTRACT:
A MOSFET wherein the formation of a channel in a channel formation region is controlled by a voltage applied to an insulated gate, comprising: a semiconductor substrate; a first semiconductor layer (drain region) of a first conductivity type formed on a surface of the semiconductor substrate; a second semiconductor layer (body region) of a second conductivity type provided within the first semiconductor layer, where a part thereof forms the channel formation region; a third semiconductor layer (source region) of the first conductivity type provided selectively in the second semiconductor layer; and a body contact region in electrical contact with the second semiconductor layer. The body contact region is formed in an area that is separated from an active region by a non-active region. With this structure, parasitic bipolar transistors operate simultaneously throughout the entire device so that a uniform breakdown current is generated, thus preventing element destruction due to current concentrations.

REFERENCES:
patent: 5917751 (1999-06-01), Wakita

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