Insulated gate semiconductor device and process for fabricating

Details Insulated gate semiconductor device and process for fabricating Insulated gate semiconductor device and process for fabricating

1994-08-05

1996-06-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 51, 257 52, 257 57, 257347, 437174, 437247, 437228, 437934, H01L 2976, H01L 21306

Patent

active

055302653

ABSTRACT:
A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by using ion implantation, ion doping, or doping a plasma of ions; and then effecting rapid thermal annealing by irradiating a ultraviolet radiation, a visible light, or a near-infrared radiation for a short period of time. The source, drain, and channel forming regions are formed substantially within a single plane.

REFERENCES:
patent: 4377421 (1983-03-01), Wada et al.
patent: 5329140 (1994-07-01), Sera

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