Fishing – trapping – and vermin destroying
Patent
1995-03-21
1996-07-30
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 41, 437 44, H01L 21265
Patent
active
055411320
ABSTRACT:
An insulated gate field effect transistor (10) having an reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor material (11). A gate oxide layer (26) is formed on the dopant well (13) wherein the gate oxide layer (26) and a gate structure (41) having a gate contact portion (43) and a gate extension portion (44). The gate contact portion (43) permits electrical contact to the gate structure (41), whereas the gate extension portion (44) serves as the active gate portion. A portion of the gate oxide (26) adjacent the gate contact portion (43) is thickened to lower a gate to drain capacitance of the field effect transistor (10) and thereby increase a bandwidth of the insulated gate field effect transistor (10).
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Baker Frank K.
Burnett James D.
Buxo Juan
Davies Robert B.
Dow Diann
Dover Rennie William
Dutton Brian K.
Motorola Inc.
Wilczewski Mary
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