Insulated gate semiconductor device and manufacturing method the

Details Insulated gate semiconductor device and manufacturing method the Insulated gate semiconductor device and manufacturing method the

1995-02-14

2000-08-22

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257153, 257330, H01L 29749

Patent

active

061076503

ABSTRACT:
An insulated gate semiconductor device in which the ON voltage is decreased by providing strip like trenches (207) having gate electrodes (210) buried therein are formed in an upper main surface of a semiconductor base body (200), and an N.sup.+ emitter layer (206) is exposed in a ladder-like form in the upper main surface of the semiconductor base body interposed between adjacent trenches (207). Accordingly, even if the position of a zonal region (Ra) which is a contact surface with an emitter electrode (212) is shifted, the emitter electrode (212) is surely in contact with the N.sup.+ emitter layer (206). Furthermore, the ladder-like N.sup.+ emitter layer (206) is formed adjacent to the trench (207), so that a channel region (208) is formed without discontinuation along the trench (207). Accordingly, it has the effect of facilitating miniaturization of elements and of effectively making use of the miniaturization to decrease the ON voltage.

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