Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-08-01
2008-08-26
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S779000, C257S782000, C257S784000
Reexamination Certificate
active
07417295
ABSTRACT:
Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.
REFERENCES:
patent: 5502337 (1996-03-01), Nozaki
patent: 6022797 (2000-02-01), Ogasawara et al.
patent: 6538326 (2003-03-01), Shimizu et al.
patent: 6727590 (2004-04-01), Izumitani et al.
patent: 7217979 (2007-05-01), Matsunaga et al.
patent: 2002/0006717 (2002-01-01), Yamaha
patent: 2002/0011669 (2002-01-01), Fujiki et al.
patent: 2002/0043723 (2002-04-01), Shimizu et al.
patent: 2002/0145206 (2002-10-01), Park et al.
patent: 2003/0042499 (2003-03-01), Reiner
patent: 2003/0080428 (2003-05-01), Izumitani et al.
patent: 2004/0016949 (2004-01-01), Semi
patent: 2005/0023692 (2005-02-01), Matsunaga et al.
patent: 2005/0042853 (2005-02-01), Gasner et al.
patent: 2005/0173801 (2005-08-01), Mimura et al.
patent: 2005/0269702 (2005-12-01), Otsuka
patent: 2006/0125118 (2006-06-01), Yamazaki
patent: 2006/0267222 (2006-11-01), Saito
patent: 2007/0052068 (2007-03-01), Takemura et al.
patent: 2007/0182001 (2007-08-01), Kanzaki et al.
patent: 08-255911 (1996-10-01), None
patent: 2002-368218 (2002-12-01), None
Korean Office Action dated Jun. 22, 2006, directed to counterpart KR application No. 10-2006-0070114.
Kushiyama Kazunari
Oikawa Makoto
Okada Tetsuya
Fourson George
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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