1988-12-28
1991-04-30
Hille, Rolf
357 13, 357 15, 357 234, H01L 2978
Patent
active
050123130
ABSTRACT:
An insulated gate semiconductor device has a gate protection circuit wherein the breakdown voltage can be arbitrarily selected. In one embodiment, the gate protection circuit includes first polysilicon layer of a first resistance overlaying the gate insulation layer formed on the semiconductor substrate and laterally spaced from the gate layer, and second polysilicon layer of a second resistance higher than the first resistance contacting the first polysilicon layer to form at least one pair of diodes for protecting the gate insulation layer from electrostatic destruction caused by a sudden voltage surge applied to the gate layer. In a second embodiment, the gate protection circuit includes a pair of Schottky barrier diodes consisting of a gate layer and a separation layer overlaying the gate insulation layer together with a layer contacting the gate layer and separation layer.
REFERENCES:
patent: 3728591 (1973-04-01), Sunshine
patent: 3964084 (1976-06-01), Andrews, Jr. et al.
patent: 3987216 (1976-10-01), Bhatia et al.
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4538167 (1985-08-01), Yoshino et al.
patent: 4583087 (1986-04-01), van de Venne
patent: 4709253 (1987-11-01), Walters
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 4803527 (1989-02-01), Hatta et al.
patent: 4831424 (1989-05-01), Yoshida et al.
Fuji Electric & Co., Ltd.
Hille Rolf
Loke Steven
LandOfFree
Insulated gate semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-644853