Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

1993-08-31

1995-07-11

Cunningham, Terry D.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327310, 327312, 327313, 327387, 327403, 327427, 327430, 327432, 327475, H03K 1716

Patent

active

054324718

ABSTRACT:
In order to prevent a malfunction caused by an electrical noise and limit an excessive main current at a high speed while cutting off the same to a value close to zero, the main current is regulated by an IGBT (1) which is connected with a load. A part of this main current is shunted to another IGBT (2). The as-shunted current flows through a resistor (3), to be converted to a voltage across the resistor (3). When the main current is excessively increased by shorting of the load or the like, this voltage exceeds a prescribed value so that a transistor (5) and a thyristor (7) enter conducting states. Consequently, a voltage across a gate (G) and an emitter (E) of the IGBT (1) is so reduced as to cut off the main current. The transistor (5) prevents the main current from excessive increase since the same has a high speed of response, while the thyristor (7) cuts off the main current to zero since the same has lower resistance in conduction.

REFERENCES:
patent: 4051392 (1977-09-01), Rosenthal et al.
patent: 4532443 (1985-07-01), Glennon
patent: 4599554 (1986-07-01), Jaycox et al.
patent: 4675561 (1987-06-01), Bowers
patent: 4750079 (1988-06-01), Fay et al.
patent: 4918339 (1990-04-01), Shigeo et al.
patent: 4924344 (1990-05-01), Guajardo
patent: 4961006 (1990-10-01), Pace et al.
patent: 5057719 (1991-10-01), Niedra
patent: 5121000 (1992-06-01), Naghshineh
patent: 5121013 (1992-06-01), Chuang et al.
patent: 5124595 (1992-06-01), Mandelcorn
patent: 5166541 (1992-11-01), Mori
patent: 5237213 (1993-08-01), Tanoi
patent: 5247207 (1993-09-01), Wer et al.
patent: 5272392 (1993-12-01), Wong et al.
patent: 5272399 (1993-12-01), Tihanyi et al.
Patent Abstracts of Japan, vol. 14, No. 479 (E-992), Oct. 18, 1990, JP 2 197 213, Aug. 3, 1990.
Patent Abstracts of Japan, vol. 10, No. 297 (E-444), Oct. 9, 1986, JP 61 114 613, Jun. 2, 1986.

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