Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

1994-12-02

1996-04-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

257172, 257178, 257474, 257486, 257766, 257764, 257342, H01L 2974, H01L 31111

Patent

active

055043518

ABSTRACT:
A method of forming an insulated gate semiconductor device (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrode (19) is isolated from the first major surface by a dielectric layer (18). A first current conducting electrode (23) contacts a portion of the first major surface (12). A second current conducting electrode (24) contacts another portion of the monocrystalline semiconductor substrate (11) and is capable of injecting minority carriers into the monocrystalline semiconductor substrate (11). In one embodiment, the second current conducting electrode contacts a second major surface (13) of the monocrystalline semiconductor substrate (11).

REFERENCES:
patent: 3653999 (1972-04-01), Fuller
patent: 4692991 (1987-09-01), Flowers
patent: 4694313 (1987-09-01), Beasom
patent: 4772523 (1988-09-01), Mace et al.
patent: 4952992 (1990-08-01), Blanchard
patent: 5023482 (1991-01-01), Bellavance
patent: 5171696 (1992-12-01), Hagino
patent: 5273917 (1993-12-01), Sakurai

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