Insulated-gate semiconductor device

Details Insulated-gate semiconductor device Insulated-gate semiconductor device

1978-07-06

1980-07-15

Wojciechowicz, Edward J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 307251, H01L 2707

Patent

active

042131405

ABSTRACT:
An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.

REFERENCES:
patent: 4074151 (1978-02-01), Buckley et al.

Affiliated with

Also associated with

Rating

Insulated-gate semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated-gate semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated-gate semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466621