Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1990-11-19
1993-05-11
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257128, 257123, 257147, 257139, H01L 2974, H01L 29747, H01L 2910
Patent
active
052104320
ABSTRACT:
According to this invention, there is disclosed an insulated gate GTO thyristor comprising a pnpn structure including a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. The thyristor has a first gate electrode contacting the p-type base layer and a second gate electrode formed on a channel region of the p-type base layer through a gate insulating film. An n+-type layer of the n-type emitter layer immediately below a cathode electrode and an n--type layer of the n-type emitter layer contacting the channel region are formed in different manufacturing steps, and an emitter breakdown voltage and the threshold voltage of the second gate electrode are optimally set.
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patent: 4959703 (1990-09-01), Ogura et al.
patent: 4969028 (1990-11-01), Baliga
IEEE Transactions on Electron Devices, vol. ED-32, No. 3, Mar. 1985, S. Hachad et al. "Latchup Criteria in Isulated Gate p-n-p-n Structures".
Atsuta Masaki
Nakagawa Akio
Shinohe Takashi
Fahmy Wael
Hille Rolf
Kabushiki Kaisha Toshiba
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