Insulated gate field-effect transistors

Details Insulated gate field-effect transistors Insulated gate field-effect transistors

1979-12-31

1981-05-19

Edlow, Martin H.

357 4, 357 30, 357 67, 357 58, H01L 2978

Patent

active

042688442

ABSTRACT:
An improved normally off insulated gate field-effect transistor capable of peration at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are realized by forming n.sup.+ contacts for the n-channel device and p.sup.+ contacts for the p-channel device. Au-Sn will form n.sup.+ contacts while Au-Zn will form p.sup.+ contacts.

REFERENCES:
patent: 3354365 (1967-11-01), Belasco
patent: 4111725 (1978-09-01), Cho et al.
patent: 4115914 (1978-09-01), Harari
patent: 4161739 (1979-07-01), Messick

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