Insulated gate field effect transistor having high transconducta

Details Insulated gate field effect transistor having high transconducta Insulated gate field effect transistor having high transconducta

1974-06-28

1976-02-03

Larkins, William D.

Metal treatment

Stock

Ferrous

148 15, 357 91, H01L 2978

Patent

active

039368572

ABSTRACT:
An insulated gate field effect transistor having improved high-frequency operating characteristics includes an extended region electrically connected to one of the source and drain regions and spaced from the surface of the substrate. The extended region extends toward the other of the source and drain regions such that the distance between the source and drain regions is relatively small within the substrate and relatively large at the surface of the substrate.

REFERENCES:
patent: 3615934 (1971-10-01), Bower
Shimizu et al., "Charge-coupled devices," Appl. Phys. Lett., Vol. 22, No. 6, Mar. 15, 1973, pp. 286-287.

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