Insulated gate field effect transistor having guard ring regions

Details Insulated gate field effect transistor having guard ring regions Insulated gate field effect transistor having guard ring regions

1995-03-10

1998-03-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257170, 257173, 257368, 257487, 257488, 257490, H01L 2974, H01L 2976, H01L 2358

Patent

active

057238820

ABSTRACT:
An insulated gate field effect transistor comprising a semiconductor substrate having one side on which a cell area is composed of a plurality of first wells of a first conductivity type, each of the first wells containing a source region of a second conductivity type. A channel region is defined in the surface portion of the semiconductor substrate adjoining to the source region, and a gate electrode is formed, via a gate insulating film, at least over the channel region. A source electrode is in common contact with the respective source regions of the plurality of first wells. The semiconductor substrate has a drain electrode provided on another side. A current flows between the source electrode and the drain electrode through the channel being controlled by a voltage applied to the gate electrode. A guard ring area is disposed on the one side of the semiconductor substrate so as to surround the cell area. The source electrode has an extension connected to a second well of a second conductivity type formed in the one side between the cell area and the guard ring area to provide a by-pass such that, when a current concentration occurs within the guard ring area, the concentrated current is conducted directly to the source electrode in the cell area through the by-pass, thereby preventing the concentrated current from causing a forward biassing between the first wells and the source region.

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