Insulated gate field effect transistor having drain region conta

Details Insulated gate field effect transistor having drain region conta Insulated gate field effect transistor having drain region conta

1974-12-16

1977-01-25

Lynch, Michael J.

357 52, 357 54, H01L 2978

Patent

active

040054500

ABSTRACT:
An insulated gate field effect transistor formed on one main surface of a semiconductor substrate comprises a drain region the impurity concentration of which is lower than twice that of the semiconductor substrate and the conductivity type is reverse to that of the substrate and a region of a high impurity concentration, formed in the low impurity concentration region, the conductivity type of which is the same as that of the low impurity concentration region.

REFERENCES:
patent: 3596347 (1971-08-01), Beale et al.
patent: 3631312 (1971-12-01), Moyle et al.
patent: 3760242 (1973-09-01), Duffy et al.

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