Insulated gate field effect transistor having a partial channel

Details Insulated gate field effect transistor having a partial channel Insulated gate field effect transistor having a partial channel

1994-04-04

1995-08-15

Thomns, Tom

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 57, H01L 21265

Patent

active

054419069

ABSTRACT:
A complementary insulated gate field effect transistor (10) having a partial channel. A gate electrode structure (29, 31) is formed on a dopant well (13, 14). An implant block mask (33, 38) is formed on a portion of the gate structure. An impurity material is implanted into the dopant well to form a dopant region (34, 39) having a first portion (36, 42) and a second portion (37, 41). The implant is of sufficient energy that a portion of the impurity material penetrates a portion gate electrode structure (29, 31) to form the second portion (37, 41) which serves as the partial channel. The partial channel provides the complementary insulated gate field effect transistor (10) with a low subthreshold swing, and improved saturation current and source/drain parasitic capacitance.

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